| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a light proximity effect correcting method and a mask data forming method for semiconductor manufacturing process. SOLUTION: Corner parts (24) included in a pattern (21) in layout data are detected, a 1st side (25) between the corner parts is detected, and a 2nd side (28) which is nearly parallel to the 1st side and included in the pattern is detected, and a specific corner part (α) which comes into contact with the 1st or 2nd side is detected and the lengths (Ls1, Ls2) of vertical sides which are adjacent to the 1st or 2nd side are detected. It is decided whether the detected lengths are larger than a set value (height and when so, a correction area surrounding a terminal part of the pattern is determined according to a 3rd side (29) obtained by extending the 1st side up to a position corresponding to the specific corner part (α) in contact with the adjacent vertical side and added to the pattern.</p> |
