发明名称 APPARATUS AND METHOD FOR FORMING DEPOSITION FILM WITH PLASMA CVD METHOD
摘要 PROBLEM TO BE SOLVED: To greatly reduce a deposited amount of polysilane inside an exhaust pipe, shorten a time for cleaning treatment, reduce the consumed amount of raw materials for cleaning, decrease degradation of an oil in an exhaust pump, and decrease degradation of an exhaust pump. SOLUTION: An apparatus for forming a deposition film, has a reaction vessel 101, a substrate holder 105, a source-gas introducing means 192, a substrate heating means 106, a high-frequency energy introducing means 110, and the exhaust pipe 111, and arranges a heater 195 made from graphite material inside the exhaust pipe 111, which has a ClF3 gas introducing means 138. A method for forming the deposition film includes forming the deposition film by heating inside of the exhaust pipe 111 with the heater 195 made from the graphite material, and using the ClF3 gas for cleaning treatment after forming the deposition film.
申请公布号 JP2002256436(A) 申请公布日期 2002.09.11
申请号 JP20010062147 申请日期 2001.03.06
申请人 CANON INC 发明人 MATSUOKA HIDEAKI;SEKI YOSHIO;KATAGIRI HIROYUKI;KARAKI TETSUYA;HITSUISHI MITSUHARU
分类号 G03G5/08;C23C16/44;H01L21/205;H01L21/302;H01L21/3065;H01L31/04;(IPC1-7):C23C16/44;H01L21/306 主分类号 G03G5/08
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