发明名称 Structure and method for index-guided inner stripe laser diode structure
摘要 An inner stripe laser diode structure (100) for GaN laser diodes is disclosed. Inner stripe laser diode structures provide a convenient means of achieving low threshold, single mode laser diodes. The structure of an inner stripe laser diode is modified to produce lateral index guiding. <IMAGE>
申请公布号 EP1104059(A3) 申请公布日期 2002.09.11
申请号 EP20000309746 申请日期 2000.11.03
申请人 XEROX CORPORATION 发明人 KNEISSL, MICHAEL A.;BOUR, DAVID P.;ROMANO, LINDA T.;KRUSOR, BRENT S.;JOHNSON, NOBLE M.
分类号 H01S5/22;H01S5/223;H01S5/323;H01S5/343 主分类号 H01S5/22
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