发明名称 |
Structure and method for index-guided inner stripe laser diode structure |
摘要 |
An inner stripe laser diode structure (100) for GaN laser diodes is disclosed. Inner stripe laser diode structures provide a convenient means of achieving low threshold, single mode laser diodes. The structure of an inner stripe laser diode is modified to produce lateral index guiding. <IMAGE> |
申请公布号 |
EP1104059(A3) |
申请公布日期 |
2002.09.11 |
申请号 |
EP20000309746 |
申请日期 |
2000.11.03 |
申请人 |
XEROX CORPORATION |
发明人 |
KNEISSL, MICHAEL A.;BOUR, DAVID P.;ROMANO, LINDA T.;KRUSOR, BRENT S.;JOHNSON, NOBLE M. |
分类号 |
H01S5/22;H01S5/223;H01S5/323;H01S5/343 |
主分类号 |
H01S5/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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