| 摘要 |
PROBLEM TO BE SOLVED: To provide a target for stably manufacturing a transparent electroconductive thin-film, of which the transmittance decreases very little in an infrared wavelength region, and further which has a low resistance equal to that of an In2 O3 -Sn based film, by a sputtering method with an adequate reproducibility. SOLUTION: This method for manufacturing a sintered target includes sintering mixed powder, which contains indium oxide as a main component, and tungsten in a range of 0.003-0.15 by atom ratio for tungsten/indium. Preferably the tungsten is substitutionally dissolved into indium sites of indium oxide, and the relative density is preferably 90% or more. |
