发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive type photoresist composition for exposure with far UV ensuring an expanded focal depth and improved foreign matter on a resist pattern. SOLUTION: The positive type photoresist composition contains a compound which generates an acid when irradiated with active light or radiation, an alkali-insoluble or slightly alkali-soluble resin having solubility in an alkali developing solution increased when decomposed by the action of the acid and a compound represented by a specified structure.
申请公布号 JP2002258483(A) 申请公布日期 2002.09.11
申请号 JP20010057062 申请日期 2001.03.01
申请人 FUJI PHOTO FILM CO LTD;FUJIFILM ARCH CO LTD 发明人 NISHIYAMA FUMIYUKI;FUJIMORI TORU;TAKITA SATOSHI;ITABASHI HIDEYUKI
分类号 G03F7/039;C08K5/00;C08K5/101;C08L25/18;G03F7/004;H01L21/027 主分类号 G03F7/039
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