发明名称 |
POSITIVE TYPE PHOTORESIST COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To provide a positive type photoresist composition for exposure with far UV ensuring an expanded focal depth and improved foreign matter on a resist pattern. SOLUTION: The positive type photoresist composition contains a compound which generates an acid when irradiated with active light or radiation, an alkali-insoluble or slightly alkali-soluble resin having solubility in an alkali developing solution increased when decomposed by the action of the acid and a compound represented by a specified structure. |
申请公布号 |
JP2002258483(A) |
申请公布日期 |
2002.09.11 |
申请号 |
JP20010057062 |
申请日期 |
2001.03.01 |
申请人 |
FUJI PHOTO FILM CO LTD;FUJIFILM ARCH CO LTD |
发明人 |
NISHIYAMA FUMIYUKI;FUJIMORI TORU;TAKITA SATOSHI;ITABASHI HIDEYUKI |
分类号 |
G03F7/039;C08K5/00;C08K5/101;C08L25/18;G03F7/004;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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