METHOD FOR FORMING FINE PATTERN, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form a fine pattern having both of a groove pattern and a hole pattern in the process of manufacturing a semiconductor device without carrying out vacuum vapor deposition. SOLUTION: A two-layer resist having an organic resin 13 as the lower layer resist and a silylation resist 14 as the upper layer resist is formed by coating. A part of the silylation resist 14 is exposed in a hole pattern (a cylindrical form) and crosslinked, then the whole surface of the wafer is silylated to add Si in the part except for the crosslinked part 15 of the upper layer resist. After the upper layer resist is subjected to the treatment to improve the heat resistance, a two-layer resist having an organic resin 19 as the lower layer resist and a silylation resist 20 as the upper layer resist is further formed thereon by coating. The part of the silylation resist 20 corresponding to the position above the crosslinked part 15 is crosslinked in a groove pattern (in a parallelepiped form), and then the whole surface of the wafer is silylated. The wafer is finally etched to form a groove pattern 23 and a hole pattern 24.