Method for fabricating cladding layer in top conductor

摘要

A method for cladding two or three sides of a top conductor 20 for a magnetic memory device 10 in ferromagnetic material 58 includes forming a trench 46 with side walls 50 in a coating layer 40 above the memory device. A first ferromagnetic material is deposited along the side walls of the trench. Any ferromagnetic material in a bottom of the trench 54 can be removed. A conductor material 62 is deposited in the trench over the memory device. A second ferromagnetic material 74 is deposited over the conductor material in the trench to form a cladding of the ferromagnetic material around three sides of the conductor. <IMAGE>