| 摘要 |
<p>In the manufacture of a semiconductor device, after an insulating film (4) and a first polycrystalline silicon film (5) are selectively dry etched to form a contact hole, the substrate is cleaned with a cleansing agent composed, for example, of ammonia, hydrogen peroxide and water, to remove anomalous residues (8). This suppresses the single-crystallization in polycrystalline silicon that is to form the emitter electrode, as well as preventing an interface oxide film from remaining when a heat treatment is conducted to diffuse dopants, and thereby it also regulates the emitter dopant concentrations and thus lowers the emitter electrode resistance, which will provide a stable hFE. Anomalous bodies such as water-marks are not accidentally produced in the cleaning step following dry etching step to form the emitter electrode, and thereby an increase in yield and enhancement of device reliability are achieved. <IMAGE></p> |
