发明名称 CONTAMINATION EVALUATING METHOD ON SUBSTRATE SURFACE, CONTAMINATION EVALUATING DEVICE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for evaluating contamination by a molecular or cluster chemical substance adsorbed on the surface of a desirable region without damaging a semiconductor substrate having a complicated shape and the surface constituted with plural kinds of materials, and provide a device for evaluation and a manufacturing method for a semiconductor device based on contamination evaluation. SOLUTION: Electron beams 102 irradiate the surface of a substrate 101, and substrate current induced in the substrate 101 and flowing to a ground 110 is measured with an electrode 108 and an ampere meter 109. The contamination of the substrate under measurement is evaluated based on the difference between values of substrate current produced by the irradiation of the electron beams 102 in each measuring substrate of an evaluation target. Contamination evaluation is executed to the semiconductor substrate on the way of manufacturing in the manufacturing line of the semiconductor device, and if the substrate current value does not satisfy a condition specified by a proceeding step working process, an optimum cleaning process purposing the removal of the adsorbed substances on the substrate surface is applied.</p>
申请公布号 JP2002257765(A) 申请公布日期 2002.09.11
申请号 JP20010058075 申请日期 2001.03.02
申请人 NEC CORP 发明人 USHIKI TAKEO;YAMADA KEIZO;ITAGAKI YOSUKE;TSUJIIDE TORU
分类号 G01R1/06;G01N21/95;G01N27/00;G01Q30/10;G01Q60/40;G01R31/302;G21K7/00;H01L21/304;H01L21/306;H01L21/66;H01L29/94;(IPC1-7):G01N27/00 主分类号 G01R1/06
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