| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to reduce dust in the sputtering step. CONSTITUTION: First, a thermal oxidation silicon film(SiO2 film)(101) is formed with a thickness of about 100 nm on a silicon(Si) substrate(100), and a silicon oxide film(102) is formed with a thickness of about 1 micrometer by a CVD method. Then, a so-called PEP process is performed by a lithography technology to form a pattern of a photoresist film on the silicon oxide film(102). The pattern is then used as a mask to perform dry etching to form a wiring pattern groove having a width of 1.3 micrometer and a depth of 700 nm on the silicon oxide film(102). Then, a TaN film(tantalum nitride film)(103) is formed with a thickness of about 20 nm in the groove for the wiring pattern by the sputtering technique. Then, a Cu film is formed with a thickness of about 200 nm by the sputtering technique, and the groove for the wiring pattern is filled with Cu by an electroplating method using copper sulfate. Then processing by a chemical mechanical polishing method is performed to form a Cu wiring layer(104). |
