发明名称 METHOD FOR MANUFACTURING Cu-In LAMINATING FILM
摘要 <p>PROBLEM TO BE SOLVED: To prevent redissolution of indium when manufacturing a Cu-In laminating film by electrolytic plating, which comprises alternately a Cu layer and an In layer formed on the surface to be plated of an object to be plated, and which is used for a solar battery. SOLUTION: This method is characterized by using a plating bath which includes an indium compound for supplying indium ions, a copper compound for supplying copper ions, a citric acid compound, and an indium compound of a quantity which can form the In layer substantially consisting of indium, as the plating bath; by plating the above object to be plated, while alternately applying a potential VIn at which the above indium ion precipitates by reduction, and a potential VCu at which the above copper ion precipitates by reduction, with pulse-like waveform; and by holding the potential at the potential (Vo ) in which copper can be deposited without dissolution of indium deposited on the above surface to be plated, on the way of moving it from the potential VIn to the potential VCu .</p>
申请公布号 JP2002256478(A) 申请公布日期 2002.09.11
申请号 JP20010059804 申请日期 2001.03.05
申请人 SHINKO ELECTRIC IND CO LTD 发明人 NAKAMURA KENJI;WAKABAYASHI SHINICHI
分类号 C25D3/38;C25D3/54;C25D5/10;C25D5/18;C25D7/00;C25D21/12;H01L31/04;(IPC1-7):C25D5/18 主分类号 C25D3/38
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