| 发明名称 |
Totally self-aligned transistor with tungsten gate |
| 摘要 |
A totally self-aligned transistor with a tungsten gate. A single mask is used to align the source, drain, gate and isolation areas. Overlay error is greatly reduced by the use of a single mask for these regions. A mid-gap electrode is also self-aligned to the transistor. The electrode is preferably formed from tungsten metal.
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| 申请公布号 |
US6448120(B1) |
申请公布日期 |
2002.09.10 |
| 申请号 |
US20010837152 |
申请日期 |
2001.04.17 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KRIVOKAPIC ZORAN;MILIC OGNJEN |
| 分类号 |
H01L21/265;H01L21/28;H01L21/336;H01L21/60;H01L21/768;H01L29/10;H01L29/417;(IPC1-7):H01L21/338;H01L21/320;H01L21/476 |
主分类号 |
H01L21/265 |
| 代理机构 |
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