| 摘要 |
A process is disclosed for producing an oxide single crystal, including the steps of: melting a raw material for a single crystal of an oxide inside a crucible, contacting a seed crystal with the resulting melt, growing the oxide single crystal by pulling-down the melt through an opening of the crucible in a given pulling-down axis, and fixedly holding the seed crystal and then reducing an angle of a given crystalline orientation of the seed crystal selected for growing the single crystal to the pulling-down axis.
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