发明名称 Thin-film forming method and thin-film forming apparatus
摘要 A Raman spectrum of a thin film which must be formed is measured in a thin-film forming step for forming the thin film on a member to be processed in an atmosphere, the pressure of which has been reduced. Moreover, the conditions under which the thin film is formed are controlled in accordance with a result of measurement of the Raman spectrum. At this time, the measurement of the Raman spectrum is continuously performed in an in-line manner while the thin film is being continuously formed on the elongated-sheet-like member to be processed. The measurement of the Raman spectrum is performed while the focal point of a probe of a Raman spectrometer is being controlled with respect to the member to be processed or while the output of a laser beam from the Raman spectrometer is being controlled. The thin film which must be. formed is, for example, a protective film of a magnetic recording medium. The protective film is, for example, a hard carbon film (a DLC film).
申请公布号 US6447652(B1) 申请公布日期 2002.09.10
申请号 US20000463004 申请日期 2000.04.05
申请人 SONY CORPORATION 发明人 AMANO SHUNJI;HAYASHI HIROSHI;HIRATSUKA RYOICHI
分类号 C23C14/54;C23C16/52;G01N21/65;G01N21/84;G11B5/72;G11B5/84;(IPC1-7):C23C14/34 主分类号 C23C14/54
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