发明名称 Adaptive manufacturing of semiconductor circuits
摘要 The present invention relates to a process for implementing a base circuit design with configurable modifications to compensate for variations in component parameters due to material or processing characteristics. During the fabrication process, the base circuit is electrically tested to determine the characteristics of the base circuit given the materials and processes used to implement the circuit. Based on the testing, subsequent processing steps are used to modify the base circuit as necessary to compensate for variations in the circuit or component parameters due to the material or processing characteristics.Preferably, the base circuit includes hetero-junction bipolar transistors and the in-process testing is used to determine an associated beta value for the transistor. Based upon the determined beta value, the circuit is modified during processing to insure proper quiescent currents occur during normal operation given the beta of the transistor. Preferably, a top level mask is used to select the resistance in the base current path to select the proper base current for a desired quiescent collector current.
申请公布号 US6448793(B1) 申请公布日期 2002.09.10
申请号 US20000545128 申请日期 2000.04.07
申请人 RF MICRO DEVICES, INC. 发明人 BARRATT CURTIS A.;JORGENSON JON D.;VU KHOI T.
分类号 H01L21/66;(IPC1-7):G01R27/08 主分类号 H01L21/66
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