| 摘要 |
A transparent conductive coating (TCC) formed from gallium nitride GaN on a sapphire substrate. In order to account for the lattice mismatch between the GaN and the sapphire substrate, a nucleation layer is formed on the sapphire substrate. A mask, for example, silicon dioxide SiO2, is formed on top of the nucleation layer with a plurality of openings. GaN is grown through the openings in the mask to form a lateral epitaxial overgrowth layer upon which defect-free GaN is grown. The lateral epitaxial overgrowth compensates for the lattice mismatch between the sapphire substrate and the GaN. The use of a sapphire substrate eliminates the need for a cover glass and also significantly reduces the cost of the TCC, since such sapphire substrates are about {fraction (1/7)} the cost of germanium substrates. The TCC may then be disposed on a GaAs solar cell. In order to compensate for the lattice mismatches between the GaAs and the GaN, an indium gallium phosphate InGaP may be disposed between the GaAs solar cell and the GaN TCC to compensate for the lattice mismatch between the GaN and the GaAs. In order to further compensate for the lattice mismatch between the GaN and InGaP, the interface may be formed as a super lattice or as a graded layer. Alternatively, the interface between the GaN and the InGaP may be formed by the offset method or by wafer fusion. The TCC, in accordance with the present invention, is able to compensate for the lattice mismatches at the interfaces of the TCC while eliminating the need for a cover glass and a relatively expensive germanium substrate.
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