发明名称 Single source sputtering of thioaluminate phosphor films
摘要 A method of deposition of a phosphor in a single-source sputtering process, in which the phosphor is selected from the group consisting of ternary, quaternary or higher thioaluminate, thiogallate and thioindate phosphors, and composites thereof, synthesized with cations selected from Groups IIA and IIB of the Periodic Table of Elements. The phosphor is of a pre-determined composition of elements. The method comprising sputtering in a hydrogen sulphide atmosphere from a single source composition so as to deposit a composition on a substrate. The composition of the targets of the single source has a relative increase in concentration of elements of the phosphor that have a lower atomic weight compared to other elements in said phosphor. The relative increase is controlled such that deposition of the predetermined composition is effected on the substrate. Preferred phosphors are barium thioaluminate (BaAl2S4:Eu), and barium magnesium thioaluminates.
申请公布号 US6447654(B1) 申请公布日期 2002.09.10
申请号 US20010867080 申请日期 2001.05.29
申请人 IFIRE TECHNOLOGY INC. 发明人 KOSYACHKOV ALEXANDER
分类号 H05B33/10;C09K11/77;C23C14/00;C23C14/06;C23C14/34;(IPC1-7):C23C14/34 主分类号 H05B33/10
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