| 发明名称 |
Polycrystalline silicon-germanium films for micro-electromechanical systems application |
| 摘要 |
This invention relates to micro-electromechanical systems using silicon-germanium films. Such a system includes one or more layers of Si1-xGex, deposited on a substrate, where 0<x<=1. One or more transistors can be formed on the substrate.
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| 申请公布号 |
US6448622(B1) |
申请公布日期 |
2002.09.10 |
| 申请号 |
US20000617300 |
申请日期 |
2000.07.17 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
FRANKE ANDREA;HOWE ROGER T.;KING TSU-JAE |
| 分类号 |
B81C1/00;B81B3/00;H01L21/3205;H01L21/8238;H01L23/52;H01L27/092;H03H9/24;(IPC1-7):H01L29/82 |
主分类号 |
B81C1/00 |
| 代理机构 |
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