发明名称 Semiconductor memory device comprising more than two internal banks of different sizes
摘要 A semiconductor memory device includes a plurality of internal banks of different sizes. The internal banks are suitable for and correspond to the memory needs of a plurality of master devices. Master devices are assigned banks having sizes matched to the needs of the master devices so that inclusion of multiple buffers in a bank can be avoided. A master device that requires a small buffer is assigned a memory bank having a small size, and an external master that requires a large amount of memory is assigned a large bank. Reduction of the average number of master devices sharing each bank improves performance by reducing the number of page misses caused when different master interleave accesses of different pages in the same bank.
申请公布号 US6449209(B1) 申请公布日期 2002.09.10
申请号 US20010765963 申请日期 2001.01.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE DONG YANG
分类号 G11C11/401;G06F12/00;G06F12/06;G11C8/12;G11C11/407;(IPC1-7):G11C8/00 主分类号 G11C11/401
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