| 摘要 |
The present invention discloses a method for forming a gate for semiconductor devices by depositing a TaOxNy film as a gate oxide film. The method includes the steps of providing a semiconductor substrate where a device isolation film has been formed, growing an SiO2 or SiON film on the semiconductor substrate, depositing an amorphous TaOxNy film on the SiO2 or SiON film, performing a low temperature annealing process to improve quality of the amorphous TaOxNy film, performing a high temperature annealing process ex-situ to remove organic substances and nitrogen in the amorphous TaOxNy film, and crystallize the amorphous TaOxNy film, and depositing a metal barrier film on the crystallized TaOxNy film, and depositing a polysilicon film or metal film for a gate electrode on the metal barrier film.
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