发明名称 Protective layer for continuous GMR design using reverse photo mask
摘要 An improved process for manufacturing a spin valve structure that has buried leads is disclosed. A key feature is the inclusion in the process of a temporary protective layer over the seed layer on which the spin valve structure will be grown. This protective layer is in place at the time that photoresist (used to define the location of the spin valve relative to the buried leads and longitudinal bias layers) is removed. The protective layer is later removed as a natural byproduct of surface cleanup just prior to the formation of the spin valve itself.
申请公布号 US6447689(B1) 申请公布日期 2002.09.10
申请号 US20000584424 申请日期 2000.06.05
申请人 HEADWAY TECHNOLOGIES, INC. 发明人 TORNG CHYU-JIUH;CHIEN CHEN-JUNG;JU KOCHAN;CHANG JEI-WEI
分类号 G11B5/31;G11B5/39;H01F41/30;(IPC1-7):G11B5/39 主分类号 G11B5/31
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