发明名称 |
Ultra thin etch stop layer for damascene process |
摘要 |
A metal interconnect structure and method of making the same provides an ultra thin etch stop layer employed in conjunction with low k dielectric layers. The thinness of the etch stop layer allows higher k dielectric materials to be used as the etch stop material without increasing the overall k value of the dielectric layer/etch stop layer combination.
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申请公布号 |
US6448654(B1) |
申请公布日期 |
2002.09.10 |
申请号 |
US20010770468 |
申请日期 |
2001.01.29 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
GABRIEL CALVIN T.;OKADA LYNNE A. |
分类号 |
H01L23/522;H01L23/532;(IPC1-7):H01L23/48 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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