| 摘要 |
A semiconductor memory device having a plurality of laser fuses is provided. In the semiconductor memory device, the plurality of laser fuses include a first region including the ends of one side of the plurality of laser fuses, a second region including the ends of the other side of the plurality of laser fuses, and a fusing region in which the plurality of laser fuses are fused. Since the laser fuses included in the fusing region are inclined so as to have a predetermined angle with the parts thereof included in the first and the second regions, the overall area and width of the fusing region are reduced.
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