| 摘要 |
A surface-emitting laser in which a first distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, an active layer and a second distributed Bragg reflector composed of an alternately stacked structure made of two kinds of thin film, are formed on a semiconductor substrate, successively, including a current stenosed layer having an oxidized area in a remote junction surface therein between at least one of the first and the second distributed Bragg reflectors and the active layer, and plural capacitance-reducing layers, each layer having a smaller oxidized area than the oxidized area in a remote junction surface constituting the current stenosed layer, at least one of the first and the second distributed Bragg reflectors, the plural capacitance-reducing layers, the current stenosed layer and the active layer being arranged successively,one of the first and the second distributed Bragg reflectors constituting a first conductive type Bragg reflector,the other constituting a second conductive type Bragg reflector.
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