| 摘要 |
An improved flash memory device, which comprises core stacks and periphery stacks which are protected with an oxide layer, a protective layer and an insulating layer. A high energy dopant implant is used to pass the dopant through the insulating layer, the protective layer, and oxide layer into the substrate to create source and drain regions, without using a self aligned etch. The flash memory device has an intermetallic dielectric layer placed over the core stacks and the periphery stacks. A tungsten plug is placed in the intermetallic dielectric layer to provide an electrical connection to the drain of the flash memory device. The use of a high energy dopant implant to pass through dopant through the insulating layer, the protective layer, and the oxide layer into the substrate without the use of a self aligned source etch, reduces damage to the core stacks and periphery stacks caused by various etches during the production of the flash memory device and provides insulation to reduce unwanted current leakage between the tungsten plug and the stacks.
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