发明名称 |
Method of manufacturing a semiconductor memory device having a capacitor with improved dielectric layer |
摘要 |
In the manufacture of a semiconductor memory device having a capacitor formed by arranging a dielectric film including two layers of a silicon oxide film and a silicon nitride film between two electrode films, a thin dielectric film is formed by forming the silicon nitride film on a silicon conductive film by thermally nitriding said silicon conductive film using NO gas, then laminating a silicon oxide film on said silicon nitride film by a CVD method. The erasing/writing speed of semiconductor memory devices, in particular of flash memories or the like, is improved.
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申请公布号 |
US6448189(B1) |
申请公布日期 |
2002.09.10 |
申请号 |
US20020059122 |
申请日期 |
2002.01.31 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KANEOKA TATSUNORI |
分类号 |
H01L21/8247;H01L21/28;H01L21/31;H01L21/316;H01L21/318;H01L21/336;H01L21/469;H01L21/8234;H01L21/8242;H01L21/8244;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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