发明名称 Programmable nanometer-scale electrolytic metal deposition and depletion
摘要 A method of nanometer-scale deposition of a metal onto a nanostructure includes the steps of: providing a substrate having thereon at least two electrically conductive nanostructures spaced no more than about 50 mum apart; and depositing metal on at least one of the nanostructures by electric field-directed, programmable, pulsed electrolytic metal deposition. Moreover, a method of nanometer-scale depletion of a metal from a nanostructure includes the steps of providing a substrate having thereon at least two electrically conductive nanostructures spaced no more than about 50 mum apart, at least one of the nanostructures having a metal disposed thereon; and depleting at least a portion of the metal from the nanostructure by electric field-directed, programmable, pulsed electrolytic metal depletion. A bypass circuit enables ultra-finely controlled deposition.
申请公布号 US6447663(B1) 申请公布日期 2002.09.10
申请号 US20000694978 申请日期 2000.10.24
申请人 UT-BATTELLE, LLC 发明人 LEE JAMES WEIFU;GREENBAUM ELIAS
分类号 C25D5/18;C25D21/12;(IPC1-7):C25D5/18;C25F3/00 主分类号 C25D5/18
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