发明名称 High-efficiency bidirectional voltage boosting device
摘要 A voltage boosting device having a charge pump circuit formed by a plurality of voltage boosting stages cascade-connected together. Each voltage boosting stage is connected to the adjacent stages via a first transfer node and a second transfer node and includes a storage capacitor connected at a terminal thereof to the second transfer node and receiving on the other terminal a first phase signal switching between a first value and a second value; a switch element including an NMOS transistor connected between the first transfer node and the second transfer node; a voltage boosting capacitor connected at a terminal thereof to the control terminal of the switch element and receiving on the other terminal a second phase signal; a first precharge circuit connected between the first transfer node and the control terminal of the switch element so as to control charge transfer from the first transfer node to the second transfer node when activated by a first activation signal; and a second precharge circuit connected between the second transfer node and the control terminal of the switch element so as to control charge transfer from the second transfer node to the first transfer node when activated by a second activation signal. The first activation signal and second activation signal are never active simultaneously.
申请公布号 US6448842(B2) 申请公布日期 2002.09.10
申请号 US20010788623 申请日期 2001.02.13
申请人 STMICROELECTRONICS S.R.L. 发明人 ZANUCCOLI MAURO;CANEGALLO ROBERTO;DOZZA DAVIDE
分类号 H02M3/07;(IPC1-7):G05F1/10 主分类号 H02M3/07
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