发明名称 Heat treating method for thin film and forming method for thin film
摘要 A heat treatment method for heat treating a thin film is a method for heat treating the thin film having a metallic silicide layer, comprising a heating step, a temperature keeping step and a cooling step. Among these steps, the thin film is heated in an atmosphere of gas which is oxidizing gas or includes oxidizing gas at least in the heating step. An oxide film is formed on the thin film in the heating step to prevent the phosphorous atoms from escaping.
申请公布号 US6448178(B1) 申请公布日期 2002.09.10
申请号 US20000701024 申请日期 2000.11.22
申请人 TOKYO ELECTRON LIMITED 发明人 SUZUKI KENJI;MATSUDO MASAHIKO
分类号 H01L21/3205;C23C16/22;H01L21/205;H01L21/26;H01L21/28;H01L21/301;H01L23/52;H01L29/78;(IPC1-7):C23C16/22 主分类号 H01L21/3205
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