Method of selectively forming silicide film of merged DRAM and Logic

摘要

Disclosed is a method of selectively forming a silicide film of merged DRAM logic by which active regions of a logic side are entirely changed into a silicidation state without adding a separate photoresist patterning process even though there exist any regions in which the space between gates is somewhat narrower than in a DRAM cell forming region, and an etch stopper film of SiON material that is needed in the formation of deep contacts can be applied to a MDL process having dual gate in mass production.