发明名称 |
Method for fabricating semiconductor device |
摘要 |
The present invention discloses a method for fabricating a semiconductor device. In particular, methods of the present invention produces a contact plug which is larger than the presumed contact region. As a result, the acceptable process error margin for misalignment is increased, and the property and the yield of semiconductor devices are improved.
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申请公布号 |
US6448179(B2) |
申请公布日期 |
2002.09.10 |
申请号 |
US20010860769 |
申请日期 |
2001.05.21 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KIM JEONG HO;KIM YU CHANG |
分类号 |
H01L21/311;H01L21/3213;H01L21/60;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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