发明名称 Method for fabricating semiconductor device
摘要 The present invention discloses a method for fabricating a semiconductor device. In particular, methods of the present invention produces a contact plug which is larger than the presumed contact region. As a result, the acceptable process error margin for misalignment is increased, and the property and the yield of semiconductor devices are improved.
申请公布号 US6448179(B2) 申请公布日期 2002.09.10
申请号 US20010860769 申请日期 2001.05.21
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人 KIM JEONG HO;KIM YU CHANG
分类号 H01L21/311;H01L21/3213;H01L21/60;H01L21/768;(IPC1-7):H01L21/44 主分类号 H01L21/311
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