METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent damage of an active region and increase driving speed by using the difference of etching speed according to dopants implanted into a polysilicon layer. CONSTITUTION: A gate insulating pattern(14) and an amorphous silicon pattern are sequentially formed on a substrate(11). An LDD(Lightly Doped Drain) region(17) is formed in the substrate. An interlayer dielectric is formed to expose the amorphous silicon pattern. The amorphous silicon pattern is changed to a polysilicon pattern(20) by implanting dopants. A groove is formed by recessing the polysilicon pattern. A metal pattern(21) and a mask insulating pattern are sequentially formed in the groove. An insulating spacer(25) is formed at both sidewalls of the stacked pattern by blanket etching of the interlayer dielectric.