ACETAL-BASED PHOTORESIST POLYMER, FABRICATING METHOD THEREOF, AND METHOD FOR FABRICATING FINE PATTERNS USING THE SAME

摘要

PURPOSE: An acetal-based photoresist polymer, a fabricating method thereof, and a method for fabricating fine patterns using the same are provided to form the fine patterns by using a chemically amplified resist layer including acetal. CONSTITUTION: An etch target layer(13) is formed on an upper portion of an wafer(11). A photoresist layer is formed by coating a photoresist composition including a predetermined polymer on an upper portion of the etch target layer(13). An exposure process for the photoresist layer is performed by using an exposure mask. An alcoholic radical is formed on an exposed part of the photoresist layer in a baking process. A silylation layer(19) is formed on the exposed part of the photoresist layer by using a silylation agent. A silicon oxide layer is formed on the silylation layer(19) and a photoresist pattern is formed by removing a non-exposed portion of the photoresist layer.