发明名称 PLASMA ETCHING APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A plasma etching apparatus for manufacturing a semiconductor device is provided to be capable of maintaining stably the pressure in a reaction chamber. CONSTITUTION: A plasma etching apparatus includes a reaction chamber(20), a pump(23), a valve driver(24), a pressure control system part(25), a data storing part(26), a wavelength detector(27), and a switch part(29). The pressure control system part(25) measures the pressure in the reaction chamber, outputs control signals of the valve driver through the first output terminal(25-1) and outputs a valve open value to the second output terminal(25-2). The switch part(29) connects an input terminal(24-2) of the valve driver to the first output terminal or the data storing part.
申请公布号 KR100353560(B1) 申请公布日期 2002.09.09
申请号 KR19950058236 申请日期 1995.12.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, SE MIN
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
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