| 摘要 |
PURPOSE: A method for manufacturing an MOS transistor is provided to be capable of preventing oxidation of a gate and improving properties of a gate insulating layer. CONSTITUTION: A sacrificial layer is formed on an active region of a substrate(1) defined by an NMOS region and a PMOS region.. An n-type source/drain region(5) is formed at the NMOS region, and a p-type source/drain region(7) is formed at the PMOS region. After removing the sacrificial layer, gate electrodes(9a,9b) are formed on the NMOS region and the PMOS region, respectively. By doping n-type dopants into the gate electrode(9a) of the NMOS region and doping p-type dopants into the gate electrode(9b) of the PMOS region, an NMOS and PMOS transistor are formed.
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