| 摘要 |
PURPOSE: A circuit for controlling an internal voltage is provided to maintain constantly an operating speed and a timing margin of a semiconductor memory device by controlling the internal voltage according to a variation of fabricating processes. CONSTITUTION: An oscillator portion(10) is used for generating a square pulse having a constant period. The first delay generation portion(20) receives the square pulse from the oscillator portion(10) and generates the first delay signal(INV_out) in order to change a delay value according to a variation of process conditions. The second delay generation portion(22) receives the square pulse from the oscillator portion(10) and generates the second delay signal(RC_out) in order not to change the delay value according to a variation of process conditions. A control portion(30) generates a control signal(out) in order to control the intensity of an internal voltage according to a compared result of the first delay signal(INV_out) and the second delay signal(RC_out).
|
