| 摘要 |
1278462 PN junction devices INTERNATIONAL BUSINESS MACHINES CORP 1 Oct 1969 [15 Oct 1968] 48212/69 Heading H1K [Also in Division C4] A electroluminescent device comprises a body of direct gap semi-conductor material of an alloy of a first III-V s.c. and a second III-V s.c., the first being a direct gap s.c. having a first conduction band minimum aligned in k space with the valence band maximum and a second conduction band minimum misaligned with the valence band maximum, the second minimum being at a higher energy than the first minimum and the second s.c. being an indirect gap s.c. having first and second conduction minima aligned and misaligned respectively with the valence band maximum, the second minimum being at lower energy than the first minimum. The respective maxima and minima are located in the same crystallographic positions in the two s.c.s and the energy between the conduction band minima in the first s.c. is greater than the energy between the corresponding minima in the second s.c., the composition being such that the direct gap energy of the alloy is equal to or lower than the indirect gap energy of the alloy. Compositions specified are In 1-x Ga x P (Figs. 2 and 3, not shown) wherein x=0À60 to 0À80 for example, GaSb 1-x P x (Fig. 4, not shown), In 1-x Al x As (Fig. 5, not shown), Ga 1-x AlSb and In 1-x Al x Sb (Fig. 6, not shown) and In 1-x Al x P (Fig. 7, not shown). PN diodes such as in Fig. 1 (not shown) may have lasing applications and emit in the visible rather than infra-red spectrum and carrier injection by electron bombardment is instanced. The alloys may be grown from the melt and doped with Te for example, Zn being diffused thereafter, or solution growth techniques employed. Reference has been directed by the Comptroller to Specification 1,016,464.
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