发明名称 |
METHOD OF HIGH SELECTIVITY SAC ETCHING |
摘要 |
A method for SAC etching is provided involving a) etching a Si wafer having a nitride present thereon with a first etching gas containing a first perfluorocarbon and carbon monoxide, and b) etching the resultant Si wafer having an initially etched nitride photoresist thereon with a second etching gas containing a second perfluorocarbon in the substantial absence of carbon monoxide, wherein the etching steps a) and b) are performed at high RF power and low pressure compared to conventional processes to provide higher selectivity etching and a larger process window for SAC etching, as well as the ability to perform SAC etching and island contact etching under the same conditions with high verticality of the island contact and SAC walls. |
申请公布号 |
WO0186701(A3) |
申请公布日期 |
2002.09.06 |
申请号 |
WO2001JP03897 |
申请日期 |
2001.05.10 |
申请人 |
TOKYO ELECTRON LIMITED;TSUCHIYA, KAZUO |
发明人 |
TSUCHIYA, KAZUO |
分类号 |
H01L21/3065;H01L21/311;H01L21/60 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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