STORAGE NODE OF COMPOSITE STRUCTURE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a storage node having a perovskite structure and a ruthenium conductive layer, and to provide a method for manufacturing the same. SOLUTION: A capacitor formed on a conductive plug of a semiconductor substrate has the composite storage node having the Ru conductive layer which covers the conductive plug and a conductive oxide layer of the perovskite structure covering the Ru conductive layer, a capacitor dielectric layer covering the composite storage node, and an electrode layer covering the capacitor dielectric layer.