发明名称 SEMICONDUCTOR LIGHT-RECEIVING DEVICE
摘要 PROBLEM TO BE SOLVED: To improve light reflectivity at an interface of a semiconductor layer and a contact electrode, and restrain electrode peeling by simultaneously improving adherence of an electrode, in a semiconductor light-receiving device. SOLUTION: In a semiconductor structure constituting the semiconductor light-receiving device, a dielectric film is formed in a region where incident light is reflected, and the contact electrode is formed around the dielectric film. A close contact electrode is arranged on the contact electrode, brought into contact with the dielectric film and the contact electrode.
申请公布号 JP2002252366(A) 申请公布日期 2002.09.06
申请号 JP20010302109 申请日期 2001.09.28
申请人 FUJITSU QUANTUM DEVICES LTD 发明人 YONEDA MASAHIRO;HANAWA IKUO
分类号 H01L31/10;H01L29/732;H01L31/0216;H01L31/0224;H01L31/0232;H01L31/0304;H01L31/103;H01L31/107;H01L31/109 主分类号 H01L31/10
代理机构 代理人
主权项
地址