| 摘要 |
<p>New precursors and processes to generate fluorinated poly(para-xylylenes) ('PPX') and their chemically modified films suitable for fabrications of integrated circuit ('Ics') of <0.15 µm are disclosed. The films so prepared have low dielectric constants ('⊂') and are able to keep the integrity of the dielectric, Cu, and the barrier metal, such as Ta. Hence, the reliability of Ics can be assured.</p> |
