| 摘要 |
The invention relates to a current-responsive resistive component. The aim of the invention is to provide a component that is simple in design, that has a high or a low electric resistance depending on the intensity of the current flowing through the component and that is therefore especially useful as a switch, a sensor or a memory element. To this aim, the component consists of a manganate layer applied to a substrate, provided with electrical contacts and having a thickness of </= 4 nm. The extremely thin manganate layer used in the component according to the invention has, depending on the intensity of the current, two states with distinct electric resistance. In contrast to known tunnel magnetoresistance elements it is therefore possible to switch the two resistance states by selecting the intensity of the current. |
| 申请人 |
LEIBNITZ-INSTITUT FUER FESTKOERPER- UND WERKSTOFFFORSCHUNG DRESDEN E.V.;DOERR, KATHRIN;WALTER, THERESIA;MUELLER, KARL-HARTMUT;NENKOV, KONSTANTIN;SCHULTZ, LUDWIG |
发明人 |
DOERR, KATHRIN;WALTER, THERESIA;MUELLER, KARL-HARTMUT;NENKOV, KONSTANTIN;SCHULTZ, LUDWIG |
