| 摘要 |
PROBLEM TO BE SOLVED: To reduce the defect density of an AlGaN cladding layer of a group III nitride semiconductor laser. SOLUTION: An n-type cladding layer 502, an n-type light trapping layer 503, a three period multilevel quantum well(MQW) layer 504, a cap layer 505, a p-type light trapping layer 506 formed of Mg doped p-type GaN, a p-type AlGaN cladding layer 507 and a p-type contact layer 508 formed of Mg doped p-type GaN are grown on a GaN substrate 501 in sequence for forming an LD structure. The p-type AlGaN cladding layer 507 has a multilayer structure which is formed by interposing equally spaced three Mg doped GaN crystal recovering layers (5 nm thick) in Mg doped p-type Al0.1 Ga0.9 N (having a Mg density of 2×10<19> cm<-3> and a thickness of 0.5 μm). |
