| 摘要 |
<p>A magnetoelectronics element (40) is provided that is comprised of a first magnetic layer (42), a first tunnel barrier layer (44) on the first magnetic layer (42), a second magnetic layer (46) on the first tunnel barrier layer (44) and a stressed over-layer (48) on said second magnetic layer (46), which is configured to alter a switching energy barrier of said second magnetic layer (46).</p> |
