| 摘要 |
<p>When a field effect transistor (e.g., an LDMOSFET) saturates, the electrons traveling through the device slow down. This causes a phase shift with respect to electrons that travel through the device when the device is not saturated. By providing a shorter signal path for the electrons during saturation, it is posssible to compensate for the slower speed of the electrons so that the electrons will take the same amount of time to travel through the device regardless of whether the device is saturated or not.</p> |
