| 摘要 |
A LD structure is formed by growing stepwise, on a GaN substrate (501), a n-type cladding layer (502), a n-type optical confinement layer (503), a three-periodic multiple quantum well (MQW) layer (504), a cap layer (505), p -type optical confinement layer (506) comprising Mg-doped p-type GaN, a p-type AlGaN cladding layer (507) and a p-type contact layer (508) comprising Mg-doped p-type GaN. The p-type AlGaN cladding layer (507) has a multiple layer structure wherein three Mg-doped GaN crystal recovery layers (thickness: 5 nm) are inserted at equal intervals into a Mg-doped p-type Al0.1Ga0.9N (Mg concentration: 2 x 10<19>cm<-1>, thickness: 0.5 mu m). The above III Group nitride semiconductor element allows the reduction of the defect density of an AlGaN cladding layer in a III Group nitride semiconductor laser.
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