POSITIVE PHOTORESIST COMPOSITION FOR EXPOSURE WITH FAR ULTRAVIOLET RAY

摘要

PROBLEM TO BE SOLVED: To provide a positive photoresist composition for exposure with far UV excellent in aptness for a halftone phase shift mask in the production of a semiconductor device and to provide a positive photoresist composition for exposure with far UV excellent also in sensitivity and profile. SOLUTION: Each of the positive photoresist compositions contains (A) a polymer having a group which is decomposed by the action of an acid having a specified structure, (B) a specified dissolution inhibitor and (C) an imidosulfonate acid generating agent.