| 摘要 |
PROBLEM TO BE SOLVED: To provide resist marks which improve accuracy of positioning and a method for preparing a semiconductor using it, by suppressing deformation of the resist marks due to the influence of a thermal flow. SOLUTION: An interlayer film such as a silicon dioxide film 520 is formed on a base film, such as a poly-silicon film 510 having an opening part operating as a base mark 510a. The resist marks 530 and 540 are formed on an interlayer film. These resist marks consist of the first pattern 540 and the second pattern 530. Both of the patterns consist of a frame in a prescribed shape. The second pattern is formed separately inside of the first frame, and the width of an outward direction is shorter than the size of the first pattern. The absolute positional relation between the resist patterns formed by exposure and a wafer is confirmed by measuring the deviation of the resist marks and the base mark 510 by a superposition precision measuring instrument. |
