| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor which is not affected by a crystal grain boundary, has a high breakdown voltage and can use a large current without changing its characteristics. SOLUTION: In a channel-forming region of the thin-film transistor, there is no crystal grain boundary, carbon and nitrogen are contained at a concentration of 1×10<16> -5×10<18> cm<-3> , oxygen is contained at a concentration of 1×10<17> -5×10<19> cm<-3> , spin density is 1×10<15> -1×10<17> cm<-3> , hydrogen or halogen is contained at a concentration of 1×10<15> -1×10<20> cm<-3> , and mobility of hydrogen or halogen is 500-1,000 Vs/cm<2> .
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