| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
PROBLEM TO BE SOLVED: To reduce a collector-size dependence of a current amplification factor, in a collector-top HBT. SOLUTION: A base electrode 11, in a collector top heterojunction bipolar transistor is brought into contact with the side plane of a base layer 5 which has not been subjected to ion implantation and with the front surface of a high resistance parasitic emitter region 14, which has been subjected to the ion implantation.
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| 申请公布号 |
JP2002252344(A) |
申请公布日期 |
2002.09.06 |
| 申请号 |
JP20010047545 |
申请日期 |
2001.02.23 |
| 申请人 |
HITACHI LTD |
发明人 |
MOCHIZUKI KAZUHIRO;OKA TORU;OBE ISAO;YAMASHITA KIICHI |
| 分类号 |
H01L21/28;H01L21/331;H01L21/822;H01L21/8222;H01L21/8252;H01L27/04;H01L27/06;H01L29/41;H01L29/417;H01L29/423;H01L29/73;H01L29/732;H01L29/737;H01P1/00;(IPC1-7):H01L29/737 |
主分类号 |
H01L21/28 |
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